LG Siltron selects Veeco MOCVD for GaN-on-silicon wafer production

PLAINVIEW, USA: Veeco Instruments Inc. announced that LG Siltron, a South Korean epi wafer manufacturer, recently selected the TurboDisc K465i gallium nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System for production of gallium nitride on silicon (GaN-on-Si) wafers for power electronics and LED devices.

As traditional silicon-based power transistors approach their limits, materials such as GaN are gaining popularity to speed energy conversion at lower costs. A wide range of industries, including many in the green-tech space such as wind, solar, smart grid, and hybrid electric vehicles, are driving demand for energy-efficient GaN-based power electronics. GaN-on-Si may also offer an alternative approach to LED manufacturing.

Dr. Hee Bog Kang, GM of LG Siltron R&D, commented: “We are pleased to have chosen the TurboDisc K465i MOCVD System as our first GaN-on-Si production system. It offers unparalleled throughput advantages, and its TurboDisc technology provides superior uniformity and low particle count, which is critical for producing GaN-on-Si wafers. We appreciate the strong support we have received from Veeco, and look forward to this and future collaborations.”

William J. Miller, Veeco’s executive VP, Process Equipment, said: “We are gratified that LG Siltron has chosen the K465i, which provides low cost-of-ownership and best-in-class yields, and look forward to supporting LG Siltron as they ramp production. The market for GaN-on-Si power devices continues to grow, and the K465i offers many advantages, such as improved device performance, lower manufacturing costs and increased productivity.”