DALLAS, USA: Texas Instruments Inc. (TI) introduced a low-side gate driver for use with MOSFETs and Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-density power converters. The new LM5114 drives GaN FETs and MOSFETs in low-side applications, such as synchronous rectifiers and power factor converters.
Together with the LM5113, the industry's first 100-V half-bridge GaN FET driver announced in 2011, the family provides a complete isolated DC/DC conversion driver solution for high-power GaN FETs and MOSFETs used in high-performance telecom, networking and data center applications.
The LM5114 drives both standard MOSFETs and GaN FETs by using independent sink and source outputs from a 5-V supply voltage. It features a high 7.6-A peak turn-off current capability needed in high-power applications where larger or paralleled FETs are used. The increased pull-down strength also enables it to drive GaN FETs properly. The independent source and sink outputs eliminate the need for a diode in the driver path and allows tight control of the rise and fall times.
Key features and benefits
* Independent source and sink outputs for optimized rise and fall times enable higher efficiency.
* +4-V to +12.6-V single power supply support a wide range of applications.
* 0.23-Ohm open-drain, pull-down, sink output prevents unintended turn-on.
* 7.6-A/1.3-A peak sink/source driver current maximizes change-in-voltage over change-in-time (DV/DT) immunity.
* Matching delay time between inverting and non-inverting inputs reduces dead time losses.
* 12-ns typical propagation delay enables high switching frequency while maintaining improved efficiency.
* Up to 14-V logic inputs, regardless of VCC.
* -40 degrees C to +125 degrees C operating temperature range.
The LM5114 is available in volume now from TI and its authorized distributors. Offered in a 6-pin SOT-23 package and 6-pin LLP package with exposed pad, the suggested retail price is $0.58 in 1,000-unit quantities.