Saturday, July 18, 2009

Arradiance intros GEM-D2 ALD system

SUDBURY, USA: Arradiance unveiled the GEM-D2 Atomic Layer Deposition (ALD) system in advance of the American Vacuum Society’s annual Atomic Layer Deposition Meeting in Monterey, CA.

The GEM-D2 can be used to deposit atomically thin layers of material on virtually any substrate and was designed with the most challenging high aspect ratio and through-pore deposition applications in mind.

“From our work with sensitive, high aspect ratio microchannel structures, we became acutely aware of the need for a system in which we could repeatably and uniformly deposit complex nanolaminate films efficiently”, explains Neal Sullivan, CTO of Arradiance.

“To functionalize an MCP, the films need to be not only physically identical from run to run, but also electrically identical. It is impossible to design an experiment to make subtle parametric changes if the tool is randomly changing as well.”

Arradiance Principal Material Scientist, Philippe de Rouffignac adds: “We learned from our own applications that design for uniformity and parametric control are the keys to developmental success.

“Our unique reactor and showerhead gas delivery system and individual precursor 3-stage heating controls give us the power and flexibility to handle any complex film. We explain these advantages in more detail in our ALD 2009 poster presentation, written in collaboration with Dr. Roy Gordon of Harvard University.”

“Our broad experience in materials science, charged particle physics and systems design have been combined to make a truly robust Research system for engineers who are serious about their work”, says Ken Stenton, Arradiance CEO.

“Because of the importance of materials research in emerging growth industries such as biomedical, solar, space science, environmental and semiconductor, we saw the need for a research tool with production performance and reliability. We’re confident the GEM-D2 will meet and exceed that need.”

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