Fairchild's P-channel MOSFET offers lowest RDS(ON) in a 1x1.5mm WL-CSP package

SAN JOSE, USA: Fairchild Semiconductor brings designers of smart phones, cell phones, netbooks, medical and other portable applications a single P-Channel MOSFET that enables higher levels of efficiency and a small form factor.

The FDZ197PZ offers an RDS(ON) value of 64mOhm at VGS= -4.5V, 15 percent less than alternate solutions. This feature increases efficiency and offers a 1mm x 1.5 mm footprint, reducing board space requirements.

Its WL-CSP package provides excellent power dissipation and conduction losses characteristics compared to conventional plastic-packaged MOSFETs in a similar footprint. Unlike other MOSFETs in its class, the FDZ197PZ offers robust ESD capability (4kV), protecting the device from stresses caused by ESD events that could potentially disable the application.

This P-Channel MOSFET is fabricated with Fairchild's advanced-performance PowerTrench® MOSFET process technology, making it possible to achieve lower RDS (ON) and higher load currents in smaller package sizes.

The WL-CSP package features 6 x 300µm Pb-free solder balls for the board connection, providing excellent electrical and thermal resistance values compared to other WL-CSP pin outs. It features a low package height of only 0.65mm when mounted, facilitating slimmer designs.

The FDZ197PZ is part of a comprehensive portfolio of advanced MOSFETs and answers the industry’s need for compact, low-profile, high performance MOSFETs for charging, load switching, DC-DC and boost applications.