Monday, May 13, 2013

Peregrine intros latest SPDT RF switch for harsh space environments

USA: Peregrine Semiconductor Corp., a fabless provider of high-performance radio frequency integrated circuits (RFICs), announced availability of a new SPDT RF switch for harsh environment and space applications.

Manufactured on Peregrine’s UltraCMOS technology, the PE95421 switch is highly resistant to total dose and single event radiation effects, resulting in improved product reliability, as well as stable, and predictable, performance over the life of the mission.

The switch features HaRP technology enhancements for high linearity of 60 dBm IIP3. It is suitable for applications such as RF switch matrices, antenna arrays, and RF communication systems, with an operating frequency up to and including the C-band in commercial satellites, manned spacecraft, and high-altitude aircraft.

“We are pleased to introduce a new RF SPDT switch to meet the unique requirements of harsh environment and space applications,” said Dave Shepard, VP of Peregrine’s High-Performance Solutions business unit.

“This new device expands our existing line of rad-hard switches, frequency synthesizers, prescalers, and DC-to-DC converters for this market. Customers choose our products with confidence that they will meet the tough reliability requirements of space, due to the innovative UltraCMOS manufacturing process and our more than 20 years of space flight heritage.”

As a result of the inherent physical properties of the highly-insulating sapphire substrate, devices manufactured on UltraCMOS technology are naturally immune to radiation-induced latchup.

Further design enhancements ensure exceptionally low levels of performance drift under total dose conditions up to 100 krads (ELDRS free). The PE95421 switch features low-complexity, single-pin 3.3V CMOS logic control in a single chip. It has low insertion loss ranging from 0.77 dB @ 100 MHz to 1.38 dB @ 8500 MHz, and high isolation ranging from 86.5 dB @ 100 MHz to 27.8 dB @ 8500 MHz. Low power consumption of 3.3 micro Watts at 3.3V and high ESD tolerance up to 1000V HBM further enhance the ease-of-use of this device.

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