Wednesday, May 22, 2013

Infineon enables faster and more cost-effective realization of ASIL C/D designs for hybrid and electric vehicle subsystems

GERMANY:  Infineon Technologies AG has introduced its next generation of high-voltage IGBT gate drivers.

Designed for the main inverter of hybrid and electric vehicles (HEV), the new EiceDRIVER SIL and the EiceDRIVER Boost drivers enable automotive system suppliers to more easily and more cost-effectively design HEV drivetrain subsystems that are compliant with ASIL C/D functional safety requirements (ISO 26262).

Target applications of the new EiceDRIVERs are HEV inverters of up to 120kW using 400V, 600V and 1200V IGBTs. Early samples of the EiceDRIVER SIL and EiceDRIVER Boost are available with broad sampling planned as of December 2013.

The AECQ100 qualified EiceDRIVER SIL (1EDI2001AS) and EiceDRIVER Boost (1EBN1001AE) offer the perfect feature set to drive and control IGBTs in an automotive inverter. They provide galvanic isolation, bidirectional signal transmission, active short-circuit support and optimized IGBT switching capabilities.
Implemented as a chipset, the two devices can save significant PCB area of up to 20 percent in the HEV subsystem compared to today’s solutions. Also, the features implemented in the EiceDRIVER SIL and EiceDRIVER Boost reduce overall system level costs as they eliminate up to 60 discrete components needed in today’s solutions.

“As the world leader in advanced power and automotive electronics, Infineon has the broadest product portfolio for high-efficiency electric drivetrain applications enabling ASIL C/D designs,” says Mark Muenzer, senior director, Electric Drive Train at Infineon Technologies AG. “Combining Functional Safety with affordability, our electromobility solutions help to significantly reduce the overall system cost and improve efficiency.”

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