MagnaChip unveils 0.13um triple gate oxide CMOS process for wide voltage, mixed-signal apps

SEOUL, SOUTH KOREA & CUPERTINO, USA: MagnaChip Semiconductor Corp., a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products, announced that it now offers a 0.13um triple gate oxide CMOS process that will support wide voltage ranges for mobile device applications.

This 0.13um triple gate oxide CMOS process features one additional layer of gate oxide introducing 1.8V CMOS into a standard 1.2/3.3V CMOS array on 0.13um technology. This process is fully compatible with the standard CMOS process and is designed to keep all device parameters unchanged within process variation ranges.

Using a modular characteristic for IC design provides added flexibility by allowing the selection of either 1.2/3.3V or 1.2/1.8/3.3V CMOS processes without the need for design reverification. The triple gate oxide process for 1.2/1.8/3.3V also allows for a reduction in chip size providing a more cost-effective manufacturing process through optimization and integration of various functional blocks into one compact chip. This is particularly useful for mobile device applications.

"We are very pleased to offer a 0.13um triple gate oxide CMOS process solution for wide voltage, mixed-signal applications," said T.J. Lee, executive VP and GM of MagnaChip's Corporate Engineering. "This is an example of our dedication and effort to expand our technology to premium mixed-signal processes at advanced technology nodes. Our goal is to continue to provide differentiated process solutions to meet the application-specific needs of our worldwide foundry customers."