IXYS launches Q3-class HiPerFET fast and efficient power MOSFET family

MILPITAS, USA & BIEL, SWITZERLAND: IXYS Corp. announced the launch of its latest generation of Q-Class products with the introduction of its new Q3-Class HiPerFET Power MOSFET family.

Available with drain-to-source voltage ratings of 200V – 1000V and drain current ratings of 10A – 100A respectively, the devices provide the end customer with a broad selection range of power switching solutions that demonstrate exceptional power switching performance, enhanced device ruggedness, and high energy efficiency.

The superior performance and energy savings of these new devices allow for the development of more energy efficient and reliable power subsystems in high-power, high-performance applications such as industrial switch-mode power supplies, DC-DC converters, power factor correction circuits, server and telecom power systems, solar inverters, arc welding, plasma cutting, battery chargers and induction heating.

The new Q3-Class is a direct result of advancing IXYS’ latest PolarHV technology platform to deliver to market power switching solutions that exhibit benchmark electrical and thermal characteristics. These devices feature an optimized combination of low on-state resistance (Rdson) and gate charge (Qg) resulting in a substantial reduction in the conduction and switching loss of the device. In addition, these devices have lower gate-to-drain charge and lower gate resistance, thereby reducing switching losses with faster switching, and lower gate drive power consumption.

Power switching capabilities and device ruggedness of these devices are further enhanced through the utilization of IXYS’ proven HiPerFET process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. These featured diode properties play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness and enabling higher operating frequencies.

Additional product features include low junction-to-case thermal resistances (Rthjc as low as 0.08 degrees Celsius per watt), high avalanche energy (EAS) capabilities, and high threshold voltages (Vth) for improved noise immunity. These devices are capable of sustaining hard switching operation in high frequency applications and 4-27 MHz for radio frequency applications.

High frequency (HF) switching applications such as plasma generators, radio frequency switch-mode power supplies and HF DC-DC converters will greatly benefit by using the Q3-Class MOSFETs. Industrial power supplies for plasma heating, steel sheet heating, hardening, and seam welding are prime examples of industrial applications that can that take full advantage of the superior switching performance, energy savings, and high noise immunity that these new products have to offer.

Additionally, the enhanced dV/dt ratings and high avalanche energy capabilities provide for additional safety margins for stresses encountered in industrial high voltage switching applications, thereby improving upon the long-term reliability of these systems.

IXYS offers a full range of discrete industry standard packages regarding the release its new Q3-Class HiPerFET Power MOSFETs. These packages include the TO-247, PLUS247, TO-264, PLUS264, TO-268, and SOT-227. In addition, Q3-Class versions are offered in IXYS’ proprietary ISOPLUS package (ISOPLUS247) offering UL recognized 2500V isolation and unsurpassed thermal performance and temperature cycling capabilities.

Some part number examples are: IXFH70N20Q3 (Vdss = 200V, Id25 = 70A, TO-247), IXFT50N30Q3 (Vdss = 300V, Id25 = 50A, TO-268), IXFB100N50Q3 (Vdss = 500V, Id25 = 100A, PLUS264), IXFK64N60Q3 (Vdss = 600V, Id25 = 64A, TO-264), IXFN62N80Q3 (Vdss = 800V, Id25 = 49A, SOT-227), and IXFB44N100Q3 (Vdss = 1000V, Id25 = 44A, PLUS264).