Shin-Etsu MicroSi joins EV Group's open platform for temporary bonding materials for 3D IC manufacturing

ST. FLORIAN, AUSTRIA & TOKYO, JAPAN: EV Group (EVG), a leading supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, announced that Shin-Etsu Chemical Co., Ltd., the world's largest supplier of semiconductor materials, has joined EVG's open platform for temporary bonding/debonding (TB/DB) materials.

Shin-Etsu's advanced adhesives will be qualified with EVG's EZR (Edge Zone Release) and EZD (Edge Zone Debond) modules, which support the new ZoneBOND™ room temperature debonding process used in the production of 3D ICs.

"We are proud to be a partner in EVG's open platform for temporary bonding and debonding materials. Having worked closely with EVG's process development teams, we are pleased to have successfully completed the stringent test procedures for their ZoneBOND equipment. We look forward to working with customers that require temporary bonding to commercialize 3D packaging in a volume manufacturing environment," stated Jim Edmonds, president, Shin-Etsu MicroSi.

Markus Wimplinger, EVG's corporate technology development and IP director, commented: "Through our open materials platform approach, we are building a strong supply chain for EVG's market-leading TB/DB technologies—unlocking another key barrier in the advancement of 3D IC commercialization. Enabling the use of a wide range of adhesives from various suppliers for our equipment gives customers the most flexible choice of bonding materials for increased flexibility during thin wafer processing."

ZoneBOND capable technology, in tandem with EVG's breakthrough EZR (Edge Zone Release) and EZD (Edge Zone Debond) modules, provides a superior approach for temporary wafer bonding, thin wafer processing, and debonding applications—overcoming the last remaining limitations associated with thin wafer processing. Benefits of EVG's TB/DB equipment solutions and open materials platform include: the use of silicon, glass and other carriers; compatibility with existing, field-proven adhesive platforms; and the ability to debond at room temperature with virtually no vertical force being applied to the device wafer.

To support grinding and backside processing at high temperatures and to allow for low-force carrier separation, the concept defines two distinctive zones on the carrier wafer surface with strong adhesion in the perimeter (edge zone) and minimal adhesion in the center zone. As a result, low separation force is only required for carrier separation once the polymeric edge adhesive has been removed by solvent dissolution or other means.