Monday, March 19, 2012

Fairchild's generation II XS DrMOS provides designers thinner solution for Ultrabook apps

SAN JOSE, USA: Designers face the challenge of reducing inductor height in power supply designs in order to meet the low-profile, thinner end-system demands of applications such as Ultrabook devices and notebooks.

Fairchild Semiconductor’s FDMF6708N Generation II XS DrMOS family is a fully optimized, compact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6708N integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, 6x6mm2 PQFN Intel DrMOS v4.0 standard package.

The FDMF6708N provides designers a 50 percent smaller footprint while delivering high-switching frequency and high power density. The device’s Zero Cross Detect (ZCD) feature improves light load efficiency for extended battery life. Unlike the traditional discrete solution, this device also provides high efficiency at full load using the latest control FET and SyncFET technology as well as clip-bond packaging with lower source inductance. Traditional discrete solutions require larger PCB space, longer layout traces, higher inductances, and more components resulting in poor thermal performance at the higher frequencies required to enable lower profile magnetics.

Available in a PQFN 6x6mm2 package, the FDMF6708N device offers 2.5 percent better efficiency at peak load (15A) and 6 percent better efficiency at full load (30A) than the nearest competitor. The device is suitable for use in applications requiring 600KHz – 1.0MHz switching frequency, even with a 20V input voltage. This enables designers to use smaller and thinner inductors and capacitors for reduced solution size, while meeting thermal requirements. The FDMF6708N device helps resolve the challenges of designing an Ultrabook that is cooler, thinner, and more energy efficient.

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