Fairchild's 30V PowerTrench MOSFET provides designers best-in-class power density with less board space

SAN JOSE, USA: Driven by power efficiency standards and end-system requirements, power supply designers need energy efficient solutions that help shrink their applications power supply form factor without compromising power density. Fairchild Semiconductor’s FDMC8010 30V Power 33 MOSFET meets these needs by delivering best-in-class power density and low conduction loss in a 3.3mm x 3.3mm PQFN form factor.

Using Fairchild’s PowerTrench technology, the FDMC8010 is well suited for applications where the lowest RDS(ON) is required in small spaces such as high-performance DC-DC buck converters, Point of Load (POL), high-efficiency load switch and low-side switching, voltage regulator modules (VRM), and ORing functions. By using the FDMC8010, designers can move from a 5mm x 6mm to a 3.3mm x 3.3mm package, saving 66 percent of the MOSFET footprint area.

In isolated 1/16th brick DC-DC converter applications, the Power 33 MOSFET’s max RDS(ON) of only 1.3mΩ max, is 25 percent less than the competitive solution in this footprint. Additionally, the device reduces conduction losses thereby improving thermal efficiency by up to 25 percent.

Features and benefits
* High performance technology for best-in-class RDS(ON) of 1.3 mΩ max.
* 3.3mm x 3.3mm industry-standard form factor, PQFN – saves board space.
* Through lower power conduction loss, the device can achieve higher power density and higher efficiency than competitive solutions.
* Package is lead-free and RoHS-compliant.