Mitsubishi Electric develops C-band GaN high-electron mobility transistors for satellite earth stations

TOKYO, JAPAN: Mitsubishi Electric Corp. has developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4–8GHz) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading 100W and 50W, respectively, will ship on a sample basis beginning January 10, 2012.

Gallium Arsenide (GaAs) amplifiers have been commonly employed in microwave power transmitters. In recent years, however, Gallium Nitride (GaN) amplifiers have become increasingly popular due to their high breakdown-voltage and power density, high saturated electron speed and ability to contribute to power saving and the downsizing of power transmitter equipment.

Mitsubishi Electric first began sample shipments of high-output GaN HEMT amplifiers for C-band space application in March 2010.