RFMD releases family of linear GaN power transistors

GERMANY: RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs)--RFHA3942 (35W) and RFHA3944 (65W)--that deliver superior linear performance versus competing GaN transistors.

The release of the RFHA3942 and RFHA3944 follows the previous release of the RF393X series of UPTs targeting continuous wave (CW) and pulsed peak power applications. This new series of linear GaN discrete amplifiers is optimized for broadband applications requiring linear back-off operation or reduced spurious performance.

RFMD plans to further its technology leadership position with future releases of 10W and 95W linear GaN devices over the next 12 months, significantly expanding the GaN UPT options available to RFMD's customers.

RFMD's highly linear GaN UPTs target new and existing communication architectures requiring improved broadband linear performance in support of high peak-to-average modulation waveforms. The RFHA3942 and RFHA3944 are tunable over a broad frequency range (DC to 4GHz) and provide CW peak power of 35W and 65W respectively. They also offer high gain of 15dB and high peak efficiency of >55 percent.

Using an IS95 9.8dB PAR signal tuned to 2.1GHz, the RFHA3942 achieves -43dBc adjacent channel power (ACP) at 34dBm POUT and the RFHA3944 achieves -54dBc ACP at 37dBm POUT.

Additionally, the RFHA3942 and RFHA3944 offer high terminal impedance at the input and output of the package, enabling wideband gain and power performance advantages in a single amplifier. The
RFHA3942 and RFHA3944 are packaged in a flanged ceramic two-leaded package that leverages RFMD's advanced heat-sink and power-dissipation technologies to deliver excellent thermal stability and conductivity.