JEDEC publishes breakthrough standard for wide I/O mobile DRAM

ARLINGTON, USA: JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, has announced the availability of a new standard for Wide I/O mobile DRAM: JESD229 Wide I/O Single Data Rate (SDR).

Widely anticipated by the industry, Wide I/O mobile DRAM is a breakthrough technology that will meet industry demands for increased levels of integration as well as improved bandwidth, latency, power, weight and form factor; providing the ultimate in performance, energy efficiency and small size for smartphones, tablets, handheld gaming consoles and other mobile devices.

Wide I/O mobile DRAM enables chip-level three dimensional (3D) stacking with Through Silicon Via (TSV) interconnects and memory chips directly stacked upon a System on a Chip (SoC). The standard defines features, functionalities, AC and DC characteristics, and ball/signal assignments.

It is particularly well-suited for applications requiring extreme power efficiency and increased memory bandwidth (up to 17GBps). Examples include 3D Gaming, HD Video (1080p H264 video, pico projectors), and running multiple applications simultaneously. Wide I/O offers twice the bandwidth of the previous generation standard, LPDDR2, at the same rate of power consumption.

Sophie Dumas, chairman of JC-42.6 Subcommittee for Low Power Memories, said: “High performance mobile devices such as smartphones and tablets require high bandwidth and density, driven by demands for improved performance. JEDEC’s JC-42.6 Subcommittee is pleased to provide a solution to this industry need with the publication of JESD229 for Wide I/O mobile DRAM, which will support the high resolution display, high quality graphics and multi-tasking capabilities required by device end users now and in the future.”