Thursday, October 27, 2011

IXYS Westcode intros 2.1kV high power distributed gate thyristor

BIEL, SWITZERLAND: IXYS Corp. announced that its wholly owned UK subsidiary, Westcode Ltd, launched the first in a new range of higher power higher efficiency distributed gate thyristors (DGT) with improved technology and thermal optimisation of silicon in the package. The first introduction is a 2.1kV/1.8kV device with an average current rating of 1700A.

“The new thyristor has a 56mm (2.21 inch) diameter silicon giving up to 20 percent increase in current rating, combined with faster switching when compared to our standard products, and includes a redesigned gate structure for improved dynamic performance,” commented Frank Wakeman, Marketing & Technical Support manager. “To allow compatibility with the minimum of adjustment to existing cooling/clamping system designs, the package of this new introduction fits within the same envelope as the current Westcode range of 50mm (1.97 inch) and 53mm (2.09 inch) silicon products. The new device is available with six turn-off (tq) options from 20usec to 60usec.”

He explained, “The increased silicon diameter and improved gate design allows for better optimisation of current rating and turn-off time thereby giving a faster device with higher current rating than Westcode’s established product range.”

The device is offered in two voltage classes and six tq limits. Part number R1700MC18# has Vdrm 1.8kV and R1700MC21# has Vdrm 2.1kV, both parts have Vrrm 1.8kV. Last character ‘#’ indicates the tq, E = 25usec, F = 30usec, G = 35usec, H = 40usec, J = 50usec and K = 60usec.

Typical applications for this device include induction heating power supplies for melting, billet heating and surface treatments, as well as resonant high power supplies, UPS, power pulse switches for lasers, Electric power for trains and motor control.

Further products are planned with voltage 1.2kV, 1.6kV, 2.5kV and 2.8kV and will be launched over the next 12 months. Each of these future introductions will offer the same performance advantages as the 2.1kV device.

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