Saturday, March 12, 2011

InfiniScale and CEA-Leti to focus on process-variability management in SOI sub-28nm technology

GRENOBLE, FRANCE: CEA-Leti and InfiniScale S.A. announced that they signed a multi-year collaboration agreement to focus on process-variability management in the most aggressive technologies, especially SOI sub-28nm devices.

InfiniScale, the leading provider of model-based parametrical yield analysis and optimization for analog and mixed-signal designs, will provide its LysisTM platform for modeling and yield optimization of design-kit libraries. The Grenoble-based company also brings its know-how on development of a next-generation global solution dedicated to overcoming process variability challenges from front end to back end.

The partnership will tap Leti’s design and technological expertise and provide InfiniScale access to Leti’s fully depleted silicon on insulator (FD SOI) technology to validate InfiniScale tools with measurements on silicon.

“This collaboration stems from CEA-Leti’s recent decision to offer the design community access to our FD SOI technology,” said Ahmed Jerraya, Leti’s program manager for hardware/software integration. “Working with InfiniScale is an opportunity for us to enrich our design-tools offer by providing our partners with design kit libraries of yield- optimized circuit blocks.”

“Collaborating with Leti’s world-leading design and technology teams is an important step for InfiniScale, and it will be decisive in the development of our next-generation solution for the most aggressive sub-28nm technologies,” said Firas Mohamed, founder and CEO of InfiniScale. “With those technologies, process variability becomes critical at different levels, and it is especially important to focus on FD SOI, whose importance for major semiconductor companies is growing constantly.”

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