AKHAN Tech. debuts Miraj Diamond platform

SAN FRANCISCO, USA: In a landmark series of patent filings and technical journal submissions, AKHAN Technologies, the leader in advanced diamond electron device design, has announced that after nearly 60 years of diamond synthesis efforts the quest to commercialize diamond microelectronics has come to fruition. This has been achieved by way of the world’s first shallow n-type diamond material over silicon.

With the debut of the Miraj Diamond platform, AKHAN Technologies has developed a new patent-pending process in which n-type diamond material is created over silicon with previously undemonstrated characteristics, such as shallow ionization energy of 250 meV(a), high carrier mobility (greater than 1000 cm2/Vs in nanocrystalline diamond thin films), no graphitic phases, and previously undemonstrated performance in low voltage high current diode device applications (900(b) A/mm2 current density at +2V forward bias). The creation of the material and its demonstrated application use in varying diode structures directly challenges the domination of silicon.

Microchips fabricated from the AKHAN Miraj Diamond platform boast the capability to run electronics at higher speeds (1841(c)cm2/Vs versus <1400 cm2/Vs for electron mobility and 1000 cm2/Vs versus <450 cm2/Vs for hole mobility), with increased power handling capability (75(d) W/mm demonstrated [DC] in low field), without overheating (600°C versus 150°C maximum operating junction temperature) and, yielding application benefits like thinner/cheaper computers, longer lasting cell phone batteries, picture perfect TV screens, among others (enabling the IT and CE markets of tomorrow).

The key to the future success of the Miraj Diamond platform lies in its widespread applicability and ease of processing (with platform fabrication work performed at 5 world-class university labs, no special or advanced industry tooling is required). While benchmark testing on end-use devices has been repeatedly fabricated on thin film nanocrystalline diamond-on-silicon wafers, this patent-pending process is not restricted to any single diamond grain size or type (CVD Polycrystalline, Nanocrystalline, Single Crystal, etc.).