2010 International Microwave Symposium, ANAHEIM, USA: ON Semiconductor, a premier supplier of high performance, energy efficient silicon solutions for green electronics, introduced a new integrated passive device (IPD) process technology.
An enhancement of the company’s existing HighQ copper (Cu) on silicon (Si) IPD technology, the new IPD2 process features a second 5um copper layer that increases inductor performance, allows greater flexibility, and supports the design of highly precise, cost-effective IPDs for RF system in package applications in portable electronics equipment.
One of a number of innovative manufacturing services offered by ON Semiconductor’s custom Foundry Division, the HighQ IPD2 process utilizes advanced 8-inch wafer technology. Typical designs include baluns, low pass filters, band pass filters and diplexers used in the latest portable and wireless applications.
Here, IPD2-based designs provide important benefits for circuit designers including reduced cost, reduced thickness, small footprint, and higher performance that equates to longer battery life.
ON Semiconductor offers fully featured design tools and design support plus rapid prototyping capabilities for its IPD2 process technology. These enable potential users to quickly and cost-effectively assess whether their less sophisticated discrete or integrated PCB solutions, thicker, more costly ceramic solutions, or more expensive Gold (Au) on Gallium Arsenide (GaAs) based IPDs are suitable for conversion.
“Integrating passive devices on a cost-effective, small-size platform with low insertion losses can provide a valuable solution for designers of battery powered portable electronics,” said Rick Whitcomb, senior director, Custom Foundry Division, ON Semiconductor.
“By supporting the new process with a comprehensive set of design tools and technical assistance, we can help customers make the transition from less effective technologies to our IPD2 process in the minimum time and with maximum confidence.”