ANAHEIM, USA: Toshiba America Electronic Components Inc. (TAEC) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with a new "EL" series of high performance C-Band devices optimized for both high gain and power added efficiency.
The "EL" high gain GaAs FETs are targeted for microwave radios and solid-state power amplifiers (SSPAs) and will be exhibited in TAEC's booth, #813, at the 2010 IEEE MTT-S International Microwave Symposium, May 25 – 27 in Anaheim, California.
"Toshiba's new EL series offers the highest level of performance of our three series of C-Band GaAs FETs, with both high power added efficiency and high gain," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit. "We also offer a 'UL' series with medium power added efficiency and gain, and the 'SL' series, the standard performance level for this wavelength."
"With these high gain FETs and a newly developed 4-Watt (W) monolithic microwave integrated circuit (MMIC), also introduced during this exhibition, we offer a two-chip solution for microwave radio design. It eliminates the requirement for a mid-stage 4W discrete FET typically used in existing three-chip solutions, improves design flexibility, and saves board space and cost by reducing part count."
The first three devices in the "EL" series are 16W GaAs FETS targeted for three different C-Band frequency ranges. The TIM6472-16EL operates in the 6.4 gigahertz (GHz)(1) to 7.2 GHz range, with output power of 1dB gain compression point (P1dB) of 42.5dBm (typ.), power gain at 1dB gain compression point (G1dB) of 11.0dB (typ.) and power added efficiency of 37 percent.
Compared to the similarly rated 16W device in the SL series, TIM6472-16SL, it offers a 4.0dB increase in gain (typ.), and an increase of 1.5dB compared to the similarly rated 16W UL device, TIM6472-16UL.
The second new device, TIM7179-16EL operates in the 7.1GHz to 7.9 GHz range, with P1dB of 42.5dBm (typ.), G1dB of 10.5dB (typ.) and power added efficiency of 37 percent. Compared to the similarly rated 16W device in the SL series, TIM7179-16SL, it offers a 4.0dB increase in gain (typ.), and an increase of 2.0dB compared to the similarly rated 16W UL device, TIM7179-16UL.
The TIM7785-16EL operates in the 7.7GHz to 8.5 GHz range, with P1dB of 42.5dBm (typ.), G1dB of 10.0dB (typ.) and power added efficiency of 36 percent. Compared to the similarly rated 16W device in the SL series, TIM7785-16SL, it offers a 4.5dB increase in gain, and an increase of 1.5dB compared to the similarly rated 16W UL device, TIM7785-16UL.