ROHM signs major 1T-SRAM technology license agreement with MoSys

SUNNYVALE, USA: MoSys Inc., a leading provider of differentiated, high-density memory and high-speed interface (I/O) intellectual property (IP), announced that ROHM Co. Ltd has signed a major technology license agreement for MoSys’ 1T-SRAM® embedded memory technology. The technology license agreement will enable ROHM to design and manufacture ICs utilizing 1T-SRAM in ROHM's fabrication facilities.

Current and future generations of advanced SoCs (System-on-Chip) require significantly higher densities of embedded memory. MoSys’ patented 1T-SRAM IP, which has the advantage of enabling designs with 3 times the density in the same area as alternative solutions, high speed, low latency random access and superior reliability, provides a very compelling solution for advanced SoC designs.

“We see the need for significantly higher densities of memory in our next generation ICs. MoSys’ 1T-SRAM provides the unique advantages of higher density and lower power consumption when compared to other memory technologies, making it ideal for use in our ICs,” said Masaru Kubo, Deputy Director, KTC Development Systems Unit of KTC LSI Development Headquarters for ROHM. “This technology licensing agreement with MoSys will provide ROHM with a competitive advantage in our key markets.”

“We are very pleased to have an industry leader like ROHM adopt our 1T-SRAM technology,” said Dave DeMaria, Vice President, Business Operations at MoSys. “By choosing our 1T-SRAM embedded memory, ROHM will be able to provide their customers with next generation ICs that deliver the performance and cost advantage that they require.”