SINGAPORE: NXP Semiconductors today announced the introduction of new devices, extending its range of Trench 6 MOSFETs. The new transistors operate at 60 V and 100 V in Power SO-8 LFPAK (Loss Free PAcKage).
By combining Trench 6 silicon with the high performance LFPAK package, the new transistors provide customers with numerous performance and reliability advantages.
The LFPAK was developed as a ‘true’ power package and the package design has been optimised to give the best thermal & electrical performance, cost and reliability. LFPAK is the only Power-SO8 device available with automotive qualification (AEC-Q101), highlighting its superior ruggedness and reliability under the toughest conditions.
Key features include:
* 3.6 mΩ (typical) 60 V in a Power-SO8 footprint (PSMN5R5-60YS).
* 10.0 mΩ (typical) 100 V in a Power-SO8 footprint (PSMN012-100YS).
* World's first <1 mΩ 25 V MOSFET in a Power-SO8 footprint for switching applications.
* Power-SO8 devices rated to 175°C.
* Power-SO8 package automotive rated to AEC-Q101.
* The LFPAK is rated for ID(MAX) up to 100A.
* Fully compatible with visual inspection machines (unlike many Power-SO8 alternatives which require X-ray inspection).
* Avalanche rated.
* RoHS compliant and halogen-free.
In addition to the new Power SO-8 types, NXP has extended its range of Trench 6 MOSFETs with new devices in the industry-standard TO220 (SOT78) package operating at 60 V and 100 V adding to the portfolio of 30 V, 40 V and 80 V. The new range offers performance improvements in a wide variety of applications.
The combination of Trench 6 silicon and TO220 package delivers higher operating efficiencies, lower switching losses, improved current capability and higher power density – essential for today’s high performance power management applications.
Key features include:
* 2.4 mΩ (typical) 60 V in a TO220 package (PSMN3R0-60PS).
* 4.3 mΩ (typical) 100 V in a TO220 package (PSMN5R6-100PS).
* Rated to 175°C.
* Rated for ID(MAX) = 100 A.
* Avalanche rated.
* RoHS compliant and halogen-free.
* Low thermal resistance.
The new TRENCH 6 MOSFETs are available immediately.
Thursday, February 4, 2010
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