IXYS intros new GigaMOS TrenchT2 power MOSFETs

BIEL, SWITZERLAND & MILPITAS, USA: IXYS Corp. has announced the portfolio expansion of its GigaMOS product family with new GigaMOS TrenchT2 Standard and HiPerFET Power MOSFETs.

These new devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc at 25 degrees Centigrade). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint.

Furthermore, these new devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability and cost.

These new GigaMOSTM Power MOSFETs incorporate IXYS’ TrenchT2 Technology allowing for improved channel density while achieving lower on-state resistances and gate charge to facilitate energy-efficient switching at high speeds.

Power switching capabilities of HiPerFET versions are further enhanced via IXYS’ proven HiPerFET process, yielding a fast intrinsic rectifier which provides low reverse recovery charge (Qrr) and excellent commutating dV/dt ratings. Additional features include a 175 degrees Centigrade operating temperature and avalanche capabilities. These combined product attributes coupled with high current ratings make for an ideal device for high current power switching applications.

IXYS’ GigaMOS TrenchT2 Power MOSFETs are available in three industry standard packages TO-264, PLUS247 (hole-less TO-247 variant) and miniBLOC SOT-227. Some part number examples are: IXTK600N04T2 (40V, 600A, Rdson no greater than 1.5mOhm, TO264), IXTN550N055T2 (55V, 550A, Rdson no greater than 1.3mOhms, SOT227) IXFN520N075T2 (75V, 455A, Rdson no greater than 1.65mOhm, SOT227), IXFX360N15T2 (150V, 360A, Rdson no greater than 4mOhm, PLUS247), IXFN320N17T2 (170V, 260A, Rdson no greater than 5.2mOhm, SOT-227) and IXFX320N17T2 (170V, 320A, Rdson no greater than 5.2mOhm, PLUS247). These power MOSFETs are tailored to provide superior switching performance in a broad range high power switching applications.

Suitable applications include synchronous rectification, DC-DC converters, battery chargers, switch-mode/resonant mode power supplies, DC choppers, AC motor drives and uninterruptible power supplies.