KLA-Tencor launches PROLITH X3.1 virtual lithography tool

MILPITAS, USA: KLA-Tencor Corp. has introduced the latest generation of their PROLITH virtual lithography tool.

PROLITH X3.1 enables researchers at leading-edge chipmakers, consortia and equipment makers to quickly and cost-effectively troubleshoot challenging issues in EUV and double patterning lithography (DPL) processes, including line edge roughness (LER) and patterning issues associated with wafer topography. Using PROLITH X3.1 lithographers can streamline their research, conserve valuable lithography cell resources and accelerate product development.

"Researchers face an enormously complex task in evaluating the multiple lithography technologies for the 2Xnm and below design nodes," stated Ed Charrier, vice president and general manager of KLA-Tencor's Process Control Information Division. "They must understand how the pattern printed on the wafer is affected by process-design interactions, including effects of mask designs, scanner settings, wafer topography and variations in resist composition. PROLITH X3.1 uses first-principle physics to help researchers investigate and optimize advanced lithography processes by simulating patterning results rather than printing test wafers.

"Version X3.1's new EUV and LER models produce accurate results in just a few minutes – making it possible to dramatically reduce product development time. Moreover, this strategy can decrease the amount of scanner, track and CD-SEM tool time diverted to running feasibility experiments, freeing the EUV cell for integration and testing or the optical lithography cell for additional production runs."

PROLITH X3.1 is the latest in KLA-Tencor's comprehensive toolset that addresses advanced lithography challenges.