Samsung intros higher-performance embedded NAND flash for smartphones

TAIPEI, TAIWAN: Samsung Electronics Co. Ltd has introduced high-performance 8-gigabyte (GB) and 16GB moviNAND embedded memory chips for use in smartphones at the seventh annual Samsung Mobile Solutions Forum held here at the Westin Taipei Hotel.

The new solutions are the first memory devices in the industry fully compatible with the latest e-MMC specification, the JEDEC’s Embedded MultiMediaCard Product Standard v4.41.

Adopting the new higher performance e-MMC 4.41 specification, Samsung’s moviNAND can operate more efficiently than previous solutions developed under the e-MMC 4.4 specification by providing features that improve the responsiveness of the e-MMC device to the host (or application processor).

“We have already been providing new moviNAND solutions compatible with e-MMC v4.41 to a few key customers and getting a very positive response from them,” said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. “These solutions are consistent with our commitment to provide a diversity of technologies for embedded memory to enhance its user-friendliness, in contributing to the rapid growth of the smartphone market.”

Previously the e-MMC 4.4 interface has offered designers the flexibility of partitioning storage, such as using the single-level cell (SLC) area for high speed operations and the multi-level cell (MLC) area for high density data storage.

Now, the new chips (adhering to the new e-MMC 4.41 interface standard) provide a significantly upgraded user experience, with a high priority interrupt (HPI) and improved background operation features.

Embracing the new standardized features, the latest Samsung moviNAND chips enable more efficient processing of orders. If the host wants to execute an application or read data while the e-MMC device is writing data, the host can send an HPI command to the device so that the device stops previous writing to respond to the newest command. Using this feature, the host can receive the device’s response without any latency.

Also, when the Samsung embedded memory is not in operation, the host can command it to utilize the free time for background operations such as garbage compaction, so that the embedded memory can reduce the write latency.

In addition to its new high-performance moviNAND, Samsung is introducing ultra-thin five chip MCP (multi-chip package) solutions which measure just 1 millimeter (mm), a significant reduction over current four-chip MCPs that are 1.15mm in height (z-height). The moviNAND-based MCP will be available in combination with mobile DRAM.

The advanced multipurpose MCP offerings will be available by the end of this year for use in mobile applications with high multimedia workload such as smartphones.

Samsung already started producing 8GB moviNAND, using 30 nanometer (nm) class 32-gigabit (Gb) NAND flash chips in late July, and will start producing 16GB moviNAND using 20nm-class 32Gb NAND flash this month.

Samsung plans to start replacing its 30nm-class 32Gb NAND flash chips with a full line of 20nm-class 32Gb NAND chips for future moviNAND products later this year.