Friday, September 10, 2010

Dow Electronic Materials announces next-gen KLEBOSOL II 1630 dilutable colloidal silica slurry

TAIPEI, TAIWAN: Dow Electronic Materials, a leader and innovator in chemical mechanical planarization (CMP) technology for the global semiconductor industry, announced the availability of the KLEBOSOL II 1630 Slurry, an advanced, dilutable slurry that combines the best attributes of colloidal and fumed silica slurries.

Developed for leading-edge semiconductor manufacturing, the KLEBOSOL slurry offers a high-performance, low cost of consumables alternative for CMP.

“KLEBOSOL colloidal silica slurries provide excellent process stability with low defect levels,” said Asa Yamada, global slurry marketing director for Dow Electronic Materials.

“We are now driving to lower point-of-use (POU) solids levels to improve end user cost of consumables. This new generation of KLEBOSOL slurries now offers the performance benefits of colloidal silica with the planarization and dilution capabilities typically associated with fumed silicas. We’ve seen strong interest in this new slurry, with multiple adoptions in high volume manufacturing.”

The KLEBOSOL II 1630 slurry is formulated with elongated fractal colloidal silica particles. It combines the high stability and ease-of-handling properties of colloidal silica with a new morphology that provides fumed-like particle planarization and allows for dilution.

This makes KLEBOSOL II 1630 highly cost competitive while maintaining the performance characteristics of colloidal silica slurries, including excellent removal rate stability, low defectivity, high planarization and tight process control.

The KLEBOSOL II 1630 slurry offers lower POU solids levels with a 0.3 micron POU filtration capability. It is easy-to-handle and resistant to agglomerate formation under high shear conditions. Additionally, compared to fumed silica, it can significantly extend pad life as end users are able to use less aggressive pad conditioners due to the colloidal silica’s low impact on pad surface asperities.

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