USA: International Rectifier led the $6 billion MOSFET sector in 2013, just ahead of Infineon, while Mitsubishi Electric dominated the IGBT sector, well ahead of Infineon.
But, Infineon’s combined revenues in both sectors was enough to maintain its lead in the overall power semiconductor market, according to The Information Network's new report: Next-Generation Power Semiconductors: Markets Materials, Technologies.
Within the power semiconductor market, we think that the strongest growth will be recorded by IGBTs, for which we forecast average annual growth of 4.9 percent, from $3.1 billion in 2012, to $4 billion in 2017. Breaking down the market by transistors and modules, we note that the IGBT sector in 2013 was $0.749 billion for IGBT transistors and $2.352 billion for modules.
The Information Network sees insulated-gate bipolar transistor (IGBT) and power metal-oxide-semiconductor field-effect transistor (MOSFET) as the main growth drivers of the overall power semiconductor market.
We look for strongest growth from IGBTs, although power MOSFETs had the largest market share in 2013 due to its fast switching speed, near-perfect gate impedance, fast switching speed, excellent stability, and a relatively low on-state resistance.
The Information Network projects 3.3 percent average annual growth of the MOSFET market, from $5.4 billion in 2012 to $6.3 billion in 2017.
The acquisition of International Rectifier (IR) by Infineon will change the landscape of the power semiconductor market form 2015. IR edged out Infineon in the MOSFET market by 0.1 percent, but the two combined companies will hold more than a 27 percent share in 2014, well ahead of Fairchild Semiconductor with less than a 10 percent share.
The acquisition will propel Infineon to more than a 20 percent share of the total power semiconductor market in 2014, well ahead of Mitsubishi Electric, with less than a 9 percent share.