Everspin takes MRAM to higher densities with 16Mb product

CHANDLER, USA: Everspin Technologies has extended its MRAM leadership position with introduction of the 16-megabit (Mb) magnetic random access memory (MRAM).

The non-volatility, high performance and high reliability advantages of MRAM technology are now available for all applications requiring static RAM (SRAM) performance as well as data retention without power.

“Everspin continues to rapidly expand its MRAM portfolio, enabling more customers to differentiate their products,” said Saied Tehrani, Everspin’s COO. “Our product roadmap will deliver MRAM at increasingly higher densities, while maintaining MRAM’s unique characteristics in a cost effective way.”

The MR4A16B is a 3.3-volt, parallel I/O non-volatile RAM that features fast 35 ns access times with unlimited read/write cycles. Data is always non-volatile after each write for more than 20 years. In addition, MRAM is immune to soft error rates associated with cosmic rays that impact other memories.

The 16Mb MRAM is organized as 1,048,576 words of 16 bits. Pin and function-compatible with asynchronous SRAM, the MR4A16B targets industrial automation, robotics, network and data storage, multi-function printers and a host of other systems traditionally limited to SRAM-based designs.

The MR4A16B is available in a small footprint 48-pin ball grid array (BGA) package and a 54-pin thin small outline package (TSOPII). These packages are compatible with similar low-power SRAM products and other non-volatile RAM products.

The new 16Mb MRAM family includes commercial (0°C to +70 °C) and industrial temperature (-40°C to +85 °C) range options. Samples are available now, with production quantities beginning in July 2010.