Wednesday, February 6, 2013

ISSI announces sampling of 4Gb DDR3 SDRAM

USA: Integrated Silicon Solution Inc. has begun sampling production units of its new 4-gigabit (Gb) DDR3 SDRAMs. The 4Gb DDR3 device is the IS43TR16256A, which operates at 1.5V, is organized as 256Mx16 and packaged in a 96-ball BGA.

This adds to the DDR3 SDRAM product family, and ISSI's extensive selection of DRAMs. By using advanced technology, ISSI is able to provide the long lifecycle product support as required by applications in automotive, industrial, medical and communications.

The new device is available with clock speeds up to 933MHz (DDR3-1866). A low voltage option of 1.35V (DDR3L), IS43TR16256AL, will be offered next quarter. In addition to these x16 devices, ISSI also plans to offer devices with x8 data-width organization, with the 1.5V option being IS43TR85120A, and the 1.35V option being IS43TR85120AL.

The DDR3 and DDR3L products will be available in commercial, industrial, and automotive temperature grades.

In addition to this latest DDR3 SDRAM, ISSI also offers a broad line of SDR, mobile SDR/DDR, DDR, DDR2, and DDR3 products, as well as a comprehensive line of asynchronous and synchronous SRAMs with densities from 64Kb to 72Mb, flash memory products, and analog and mixed signal products. ISSI supports a range of Known Good Die (KGD) devices in its portfolio.

Samples of the x16, in 1.5V and 1.35V options, the  IS43TR16256A and IS43TR16256AL, are available in commercial and industrial temperature ranges, and the IS46TR16256A and IS46TR16256AL are available in automotive temperature ranges. Samples of the x8, in 1.5V and 1.35V options, will be available in Q2. Volume production shipments of the 4Gb are expected to begin in the second half of 2013.

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