EL SEGUNDO, USA: International Rectifier (IR) has introduced a family of DirectFETplus power MOSFETs featuring IR’s new generation of silicon that sets a new standard in efficiency for 12V input synchronous buck applications including next-generation servers, desktops, and notebooks.
The first two DirectFETplus devices in the new family, the IRF6811 and IRF6894, reduce on-state resistance (Rds(on)) and gate charge (Qg) compared to previous generation devices to significantly improve efficiency up to 2 percent. In addition, the devices offer ultra low gate resistance (Rg) enabling further efficiency improvement by minimizing switching losses in DC-DC converters.
“The new IRF6811 and IRF6894 chipset leverages IR’s DirectFET packaging technology and features a new generation of silicon which optimizes key MOSFET parameters to provide a best-in-class solution that delivers excellent performance, high reliability, and small footprint for next-generation computing needs,” said Omar Hassen, executive director, Low Voltage DirectFET Products, Enterprise Power Business Unit.
The IRF6811 control MOSFET is available in a Small Can while the IRF6894 synchronous MOSFET is offered in a Medium Can. The 25V DirectFETplus pair combines industry leading Rds(on) and Rg, combined with low charge to minimize conduction and switching losses. The IRF6894 also features a monolithically integrated Schottky that reduces losses associated with body diode conduction and reverse recovery.
The new DirectFETplus MOSFETs are footprint compatible with previous generation devices.
Tuesday, February 1, 2011
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