GLOBALFOUNDRIES and Rambus to develop broad IP portfolio for 14nm-XM FinFET process technology

Common Platform Technology Forum, USA: GLOBALFOUNDRIES, and Rambus Inc. have unveiled plans to collaborate for the development of a broad portfolio of complex semiconductor intellectual property (IP) optimized for GLOBALFOUNDRIES’ leading-edge process technology.

This collaboration will enable seamless integration of Rambus’ enhanced standard interface solutions into the next generation of electronics for faster time-to-market. These silicon-proven IP blocks will address the growing needs in applications ranging from high-performance computing to smart mobile devices.

Rambus will develop a range of high-speed memory and chip-to-chip serial link interfaces optimized for GLOBALFOUNDRIES processes, including the new 14nm-XM technology, which is the industry’s first 14nm offering based on a modular FinFET technology architecture. This new work will build on past collaboration on several 28nm test chips that demonstrate the capabilities of Rambus’ interfaces for both mobile and server-based applications.

“Our new foundry model of Collaborative Device Manufacturing (CDM) relies on early collaboration across the semiconductor ecosystem in order to deliver innovative solutions at the leading edge,” said Mike Noonen, executive VP of marketing, sales, design and quality at GLOBALFOUNDRIES. “This extension of our partnership with Rambus will give customers a faster path to take advantage of Rambus’ advanced interface solutions on our new 14nm-XM technology, opening up new avenues for chip designers to innovate on our process technology.”

“As the industry continues its relentless drive to more advanced technologies, deep technology engagements are required to deliver the innovative solutions necessary to bring invention to market,” said Kevin Donnelly, senior VP and GM of the Memory and Interfaces Division at Rambus. “By engaging early with GLOBALFOUNDRIES on their advanced 14nm process, we can combine our high speed, mixed signal design expertise with FinFET technology, enabling a broad portfolio of silicon-proven complex IP blocks in advance of customer needs.”

GLOBALFOUNDRIES’ 14nm-XM offering is based on a modular technology architecture that uses a 14nm FinFET device combined with elements of GLOBALFOUNDRIES’ 20nm-LPM process, which is well on its way to production. Technology development is already underway, with test silicon running through GLOBALFOUNDRIES’ Fab 8 in Saratoga County, N.Y.

The XM stands for “eXtreme Mobility,” and it is the industry’s leading non-planar architecture that is truly optimized for mobile system-on-chip (SoC) designs, providing a whole product solution from the transistor all the way up to the system level. The technology is expected to deliver a 40-60 percent improvement in battery life when compared to today’s two-dimensional planar transistors at the 20nm node.