IXYS intros new rugged and fast 1200V high-gain (XPT) IGBTs

MILPITAS, USA & BIEL, SWITZERLAND: IXYS Corp. announced the expansion of its XPT IGBT product line with the release of new discrete high-speed, high-gain 1200V products. The new devices feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high-voltage applications that require hard-switching frequencies of up to 50 kHz.

The high-speed switching capabilities of these new 1200V IGBTs allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership and reduced PCB layout area.

Developed using IXYS XPTTM design platform, these new devices feature excellent electrical characteristics which include low collector to emitter saturation voltages (Vcesat as low as 3.0V), low typical current fall times (tfi as low as 57ns), and low turn-off energy per pulse values (Eoff as low as 1.2mJ, Tj = 25 degrees Centigrade).

In addition, these new IGBTs retain a positive temperature coefficient of its collector to emitter saturation voltage for ease of parallel configuration, allowing designers to utilize multiple XPT discrete devices in parallel to achieve the desired high current requirements of their application. The low gate charge characteristics of these new devices also aid in the reduction in gate drive power requirements of the device, thus allowing the implementation of simple and more economical gate drive solutions. Additional features include dynamic avalanche ratings and a square reverse bias safe operating area (RBSOA) rated up to the device’s blocking voltage for enhanced system ruggedness.

The new 1200V XPT devices are available with IXYS’ Sonic-FRDTM anti-parallel ultra-fast diodes (Sonic-FRDTM – Suffix H1, ie. IXYN82N120C3H1). The combination of XPT IGBT and IXYS’ Sonic-FRDTM results in an optimal match for reduced turn-off losses. Furthermore, the soft recovery characteristics of the Sonic-FRDTM co-packed diode allows the XPT IGBT to be switched on at very high di/dt’s regardless of low current and temperature conditions and provides excellent EMI performance despite the level of the switched current.

A variety of high-voltage applications stands to benefit from the unique power handling and energy-efficient advantages of these new devices. List of possible applications include high frequency power inverters, UPSs, motor drives, high power lighting controls, welding machines, battery chargers, power factor correction circuits, and high-voltage switch-mode power supplies.

Device offerings include part numbers IXYH50N120C3 (Ic25 = 105A, Vcesat = 3.0V, tfi(typ) =57ns, TO-247), IXYH82N120C3 (Ic25 = 160A, Vcesat = 3.2V, tfi(typ) = 93ns, TO-247), IXYN82N120C3H1 (Ic25 = 105A, Vcesat = 3.2V, tfi(typ) = 93ns, SOT-227), and IXYB82N120C3H1 (Ic25 = 160A, Vcesat = 3.2V, tfi(typ) = 93ns, PLUS264).