IRVINE, USA: Microsemi Corp., a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, announced that the Defense Supply Center Columbus (DSCC) has granted space-level qualification on the balance of Microsemi's first family of radiation-hardened power MOSFET devices.
These popular N-Channel power MOSFETs now join Microsemi's already-qualified P-Channel power MOSFETs to complete the family of radiation hardened devices originally targeted in this development program.
Microsemi is releasing 20 new radiation-hardened hermetic power MOSFET devices in three through-hole and two surface-mount packages. These devices are radiation hardened to meet the total dose requirements of MIL-PRF-19500 up to 300,000 RAD(Si).
"Our customers now have what they have been asking for all along: a new source for radiation hardened MOSFETs," said Doug Milne, Vice President and General Manager of Microsemi's Lawrence, Massachusetts facility. He added; "The introduction of this new product family shows our commitment to the space industry and in Microsemi remaining the number one power discrete supplier in the high reliability market. Work is already under way on our next generation of radiation hardened products."
All devices are constructed to meet the demanding requirements of space applications. Radiation-hardened MOSFETs are primarily used in power supplies, power converters, motor controls, and other power switching applications. These products use the latest wafer fabrication technologies developed in Microsemi's Garden Grove, CA facility.
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