Thursday, June 24, 2010

NXP opens high performance RF product creation center

SINGAPORE: NXP Semiconductors has announced the opening of the high performance radio frequency (RF) product creation center (PCC) in Billerica, Massachusetts, USA.

This new NXP facility, located near Boston, will focus on the design of RF and Microwave integrated circuits (ICs) used in demanding applications such as defense & aerospace, Industrial, Scientific and Medical (ISM) satellite receivers and broadband communications.

* Leveraging NXP’s unique IP, product portfolio, processes and manufacturing capabilities, the design center will further enhance the position of NXP in these growing RF & Microwave markets.

* With its East Coast location, and close proximity to design teams in France and the Netherlands, the center will also strengthen the technical and application support provided to the company’s Americas-based customers.

* Uniquely positioned in the RF and microwave market with a rich portfolio of high-performance processes in-house, NXP’s broad RF portfolio spans high-power LDMOS for power amplifiers to the latest SiGe:C BiCMOS for RF/IF MMICs. Additionally, advanced CMOS process for high-speed converters completes the RF front-end. As all these technologies are designed and manufactured in-house, they are custom-tuned to application-specific requirements.

* NXP also has a long history as one of the industry’s leading compact model developers, so all technologies are supported by their associated, fully characterized RF models. This in-house process supports the company’s global design teams in leading innovation and the development of products and solutions for some of the most pressing RF front-end challenges.

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