IR’s 40 V to 200 V family of automotive-qualified MOSFETs deliver benchmark on-state resistance performance

EL SEGUNDO, USA: International Rectifier (IR) has introduced a family of automotive-qualified MOSFETs delivering benchmark on-state resistance (Rds(on)) for a range of applications including electric power steering (EPS), integrated starter alternator (ISA) pump and motor control, and other heavy loads on internal combustion engine (ICE) and hybrid vehicle platforms.

The new family of trench HEXFET power MOSFETs is available across a range of voltages from 40 V to 200 V in a variety of surface mount device (SMD) packages. Both standard and logic level gate drive MOSFETs set a new standard of Rds(on) performance for IR’s automotive plastic package MOSFET portfolio. Benchmark Rds(on) as low as 1.25 mohm max. at 40 V, 2.1 mohm max. at 60 V, 2.6 mohm max. at 75 V and 4.0 mohm max. at 100 V can be achieved. A number of the devices feature a maximum current rating of up to 240 A in a D2Pak-7P.

“IR's new family of automotive trench MOSFETs achieves benchmark performance in next-generation automotive applications including integrated starter alternators and electronic power steering,” said Jifeng Qin, product manager, Automotive MOSFETs, IR’s Automotive Products Business Unit.

IR’s automotive MOSFETs are subject to dynamic and static part average testing combined with 100 percent automated wafer level visual inspection as part of IR’s automotive quality initiative targeting zero defects. AEC-Q101 qualification requires that there is no more than a 20 percent change in Rds(on) after 1,000 temperature cycles of testing. However, in extended testing IR’s new AU bill of materials demonstrated a maximum Rds(on) shift of less than 10 percent at 5,000 temperature cycles, showing the strength and ruggedness of the bill of materials.

The new devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials.