Thursday, September 29, 2011

Accel-RF announces collaboration with leading universities research on GaN semiconductors

SAN DIEGO, USA: Accel-RF Corp. has announced collaboration with leading universities in the area of high frequency Gallium Nitride technology.

The collaboration between the universities and Accel-RF is in the form of Accel-RF providing industry leading RF equipment, software, and other services for Reliability Testing and Characterization of compound semiconductor devices such as Gallium Nitride. The goal of the collaborations is for the professors and their research teams to use these available resources for groundbreaking research in the area of compound semiconductor RF Physics, Reliability prediction, and test method improvement.

“Accel-RF is pleased to support our participating universities by providing leading edge reliability test equipment to a team of researchers,” says Roland Shaw, president and founder of Accel-RF. “Our equipment, software and support engineering services allow researchers and manufacturers to collect in-situ performance degradation data on RF/Microwave devices, and use that data to move forward the understanding of reliability drivers in advanced semiconductor technologies”, adds Shaw. Announcement of Accel-RF’s university collaboration program bolsters the company’s Co-operative Research and Development Agreement (CRADA) with the Air Force Research Laboratory announced in August of last year.

“The relationship between Accel-RF and our academic partners has and continues to be a win-win situation. The work already completed has born insights to development of more rugged GaN transistor technology that can be deployed in many applications throughout the semiconductor industry,” concludes Shaw.

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