Samsung Mobile Solutions Forum 2011, TAIPEI, TAIWAN: Samsung Electronics Co. Ltd has developed a high-performance 64-gigabyte (GB) embedded memory with 64Gb NAND for smartphones, tablets and other mobile devices, at the eighth annual Samsung Mobile Solutions Forum held at the Westin Taipei.
The new 64GB embedded multimedia card (e-MMC) provides the industry’s highest performance and thinnest profile available, utilizing Samsung’s leading-edge 64-gigabit (Gb) NAND with a toggle DDR 2.0 interface and the company’s latest 20 nanometer (nm) class* process technology.
“By starting production of the 64Gb-based 64GB e-MMC solution this year, we are accelerating the pace of adoption of premium embedded memory cards,” said Myung Ho Kim, VP, memory marketing, Device Solutions, Samsung Electronics. “As the memory technology leader, we will keep providing high-performance e-MMC products on an aggressive release schedule to meet the needs of leading mobile device providers for advanced mobile memory solutions.”
The 64GB e-MMC is being produced for high-end mobile devices in an extremely thin, eight-die stack, only 1.4 millimeters thick. It processes random write commands at 400 input/output operations per second (IOPS), which is quadruple the speed of many conventional e-MMC solutions made with 30nm-class* NAND flash memory chips.
The component features sequential read speeds of up to 80 megabytes per second (MB/s) and sequential write speeds of 40MB/s, a more than 3X improvement over high-end external mobile memory cards that now offer sequential speeds of 24MB/s and 12MB/s, respectively.
The 64GB e-MMC provides data storage space of up to 16,000 MP3 files in a single package that weighs only 0.6 grams.
Samsung provided its first 64GB e-MMC in January of 2010 using 30nm-class 32Gb NAND flash components, and late last year started producing 64GB eMMC with 20nm-class 32Gb NAND flash. The new eMMC utilizes the latest 20nm-class 64Gb NAND flash, which provides a 60 percent gain in productivity.