TI NexFET power block delivers maximum efficiency, frequency and power density in half the size of discretes

DALLAS, USA: Texas Instruments Inc. (TI) has introduced a synchronous MOSFET half bridge that achieves greater than 90 percent efficiency at 25 A – and in half the area of competitive power MOSFET devices.

TI's new CSD86350Q5D Power Block combines two asymmetric NexFET power MOSFETs in an advanced package that delivers high performance in low-voltage synchronous buck half-bridge applications, including servers, desktop and notebook PCs, base stations, switches, routers and high-current point-of-load (POL) converters.

In addition to improving efficiency and power density, the NexFET Power Block can generate up to 40 A of current with a switching frequency of up to 1.5 MHz, which reduces solution size and cost.

The optimized pinout and grounded lead frame significantly reduces development time and improves overall circuit performance. Furthermore, the NexFET Power Block can achieve comparable performance to other semiconductor technologies, such as GaN, but in a cost effective manner.

CSD86350Q5D power block
* 5-mm x 6-mm SON outline is half the size of two discrete MOSFETs in 5-mm x 6-mm QFN packages.
* Greater than 90 percent power efficiency at 25 A operation -- two percent better efficiency and 20 percent lower power loss than competitive devices.
* Double the frequency without increasing power loss versus competitive solutions.
* The SON package with an exposed grounded pad on the bottom simplifies layout.

NexFET Power Block device is available in volume now from TI and its authorized distributors in a 5-mm x 6-mm SON package. Suggested resale pricing for the CSD86350Q5D is $1.75 in 1,000-unit quantities. Samples and evaluation modules are available.