Hynix announces Intel validation of 40nm class 2Gb DDR3 products

SEOUL, SOUTH KOREA: -Hynix Semiconductor Inc. has announced Intel validation of 2Gb (Gigabit) DDR3 DRAM using 40nm class process technology.

Hynix’s newly validated products are 2Gb DDR3 SDRAM component, 4GB (Gigabyte) DDR3 SODIMM (Small Outline Dual In-line Memory Module) and 2GB DDR3 UDIMM (Un-buffered Dual In-line Memory Module) at the operating speed of 1333MHz with 1.5V power supply.

The products can offer the maximum data transfer speed of 1867MHz with 16-bit I/O and 3.7GB/s (Gigabytes per second) bandwidth. With the 40nm class 2Gb DDR3, productivity is increased by more than 60% over previous generation 50nm class process technology.

In addition, Hynix is responding to the industry demand for ‘Green’ or ‘Eco-friendly’ products with the new 40nm class 2Gb DDR3 that reduces power consumption by 40 percent over the preceding generation built on 50nm. This is about twice the industry average reduction in power consumption.

“The current mainstream density has been rapidly transitioning from 1Gb to 2Gb for high performance server market. We expect to secure the industry’s best features of both 1Gb and 2Gb DDR3 products,” said J.B. Kim, Chief Marketing Officer of Hynix.

Hynix has begun mass producing the 40nm class 2Gb DDR3. The company also expects validations of RDIMM (Registered Dual In-line Memory Module) to be completed later this year.