Tuesday, September 13, 2011

IDT low-power DDR3 register selected by Invensas for high performance memory modules

Server Design Summit 2011, SAN JOSE, USA: Integrated Device Technology Inc. (IDT) announced that its second generation, low-power DDR3 register was selected by Invensas Corporation to validate their innovative multi-die face-down (xFD) memory stacking technology on high-performance Registered Dual Inline Memory Modules (RDIMMs).

IDT’s DDR3 register was selected because it is the fastest in the industry, enabling speeds up to DDR3-2133 while minimizing register power consumption and delivering maximum density for next generation server and storage equipment.

The IDT SSTE32882KA1 DDR3 register regenerates the address, command and clock signals from the motherboard channel to the module DRAMs, minimizing drift, jitter and skew of these signals and ensuring the DRAMs operate reliably even at extreme speeds. It offers active power savings of at least 15 percent compared with other registers and supports speeds up to DDR3-2133 across standard and low voltages.

The combination of the Invensas xFD stacking technology and IDT’s register was validated by Invensas using dual face down (DFD) stacked DRAMs in a quad rank RDIMM configuration.

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