Microsemi features wide range of RF power semiconductors and subsystems

IMS2011 Conference, IRVINE, USA: Microsemi Corp. will display its family of RF components and subsystems for radar systems, defense electronics and unmanned aerial vehicle (UAV) systems at the IEEE Microwave Theory & Techniques Society's International Microwave Symposium for 2011.

Microsemi will be showing its broad line of RF power transistors, including silicon carbide (SiC) UHF static induction transistor (SIT) devices that offer high peak power for Class AB systems with a 300-microsecond pulse width, and a recently announced family of gallium nitride (GaN) devices on SiC substrates that deliver maximum performance with superior power, gain, bandwidth, drain efficiency and reliability. The company's new GaN-on-SiC devices enable the development of next-generation radar systems operating in the 2.7 GHz to 3.5 GHz frequency band.

Microsemi also will be displaying products acquired from its recent purchase of AML Communications. The company designs and manufactures a wide range of microwave low-noise and power amplifiers for military and commercial platforms operating across the 1 MHz to 40 GHz frequency range. AML's products increase the scale of Microsemi's RF component and subsystem offering and add a number of complementary technologies to the company's RF solution portfolio.