The new 350-page O-S-D Report also shows power transistor shipments rising 11 percent in 2011 to a record-high 58.8 billion units worldwide due to above-average sales growth in automotive electronics, new renewable energy systems (such as solar panels and wind turbines), battery-operated portable products, and more efficient power supplies in a range of equipment applications.
Among power transistor products, sales of modules built with insulated gate bipolar transistors (IGBTs) are expected to increase 10 percent to $2.5 billion in 2011, while IGBT transistor products and power FETs (field-effect transistors) are forecast to grow 9 percent this year to $960 million and $6.9 billion, respectively. IGBT modules, IGBT transistors, and power FETs for low- and high-voltage applications will all achieve sales records in 2011, according to the forecast contained in the new O-S-D Report. Through 2015, FET and IGBT products are expected to register the highest compound annual growth rates (CAGRs) among all power transistor products.
Between 2010 and 2015, total power transistor revenues are expected to grow at a CAGR of 6.4 percent, reaching $16.3 billion at the end of the forecast period. IC Insights' five-year forecast shows sales of low-voltage power FETs (up to 200 volts) rising at a CAGR of 6.7 percent to $16.4 billion by 2015. IGBT module sales are expected to increase by a CAGR of 7 percent to $3.2 billion in 2015 and discrete IGBT transistors are forecast to rise at an annual average of 6.5 percent to $1.2 billion in the final year of the O-S-D Report's forecast.
Source: IC Insights, USA.
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