IXYS intros 600V/400A GenX3TM IGBTs in new proprietary SMPD power packages

MILPITAS, USA & BIEL, SWITZERLAND: IXYS Corp. announced the successful integration of its GenX3TM IGBT product line with its new proprietary power package called the “SMPD” (Prefix MM).

The MMIX1G320N60B3 combines the low conduction and switching loss attributes of IXYS’ GenX3TM B3-Class IGBT product line with the high current handling and electrical isolation capabilities of its new compact, high-performance SMPD power package.

These devices are tailored to provide excellent thermal performance and temperature cycling capabilities in high-current applications that utilize power semiconductor devices that require heat sink grounding techniques to maintain optimal system performance. A broad range of applications stand to benefit from these new devices.

These applications include power inverters, UPS, motor drives and motor control, SMPS, PFC, UPS, battery chargers, welding machines and higher power lighting controls.

Initially available in the B3 speed classification, the MMIX1G320N60B3 features an excellent balance between conduction and total switching energy losses and are optimized for “medium-speed” hard-switching frequencies from 5 kHz to 40 kHz. The square reverse bias safe operating area (RBSOA) feature of this device enhances device ruggedness by insuring safe operation in snubberless, hard switching applications.

Applications that rely on multiple semiconductors connected in parallel to meet high-current requirements will benefit greatly from these devices. The MMIX1G320N60B3 is capable of supporting high current ratings within a single unit, therefore eliminating the need for additional paralleled semiconductors and associated gate drive circuitry. The net result is a decrease in the count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability and cost.

IXYS’ new SMPD power package incorporates a direct copper bond (DCB) ceramic isolator which provides 2500Vrms electrical isolation between die and heat sink. Due to the matched thermal expansion coefficients of silicon and DCB ceramic, mechanical stress to the die and solder caused by power and temperature cycling is reduced, thus improving the reliability of the device.

With an ultra-low package profile (5.3mm height x 24.8mm length x 32.3mm width), the SMPD power package features nearly one-fourth the weight and one-third the volume of conventional isolated high power packages (i.e., SOT-227), providing designers with an innovative compact device that delivers excellent power handling capabilities and thermal transfer characteristics.