GENEVA, SWITZERLAND: STMicroelectronics has introduced a device that provides an extra channel of ESD (Electro-Static Discharge) protection within the same dimensions as competing alternatives — 25 percent more channels to deliver a space-efficient solution for designers of feature-rich, tightly packed portable gadgets such as netbooks and smartphones.
In smartphones, features such as touchscreens, side keys and external connectors help users take advantage of the machines' extensive capabilities. They also increase the need for internal protection capable of preventing electrostatic damage as users pick up, hold and move around with their devices.
Designers need to provide this increased protection without consuming the valuable printed-circuit board space needed for other components supporting new features and functions that are always necessary to attract buyers.
ST's ESDA6V1-5T6 overcomes this battle for board space by integrating ESD protection diodes for five data lines within the same 1.0 x 1.0mm size as today's smallest four-line devices. Competing devices capable of protecting five lines are offered in larger packages.
The ESDA6V1-5T6 allows designers to provide the necessary ESD protection using fewer and smaller components than is possible with currently available alternatives. A low-capacitance alternative, the ESDALC6V1-5T6, for use with high-speed data lines such as those in SIM-card, camera or display interfaces, is also available.
Main features of ESDAxx6V1-5T6:
* 1.0mm x 1.0mm x 0.4mm Micro-DFN package.
* ESDA6V1-5T6: 34pF capacitance for data speeds up to 15MHz.
* ESDALC6V1-5T6: less than 9pF capacitance for data speeds up to 100MHz.
* Very low leakage current: 0.1 microamps at 3V.
* 6V breakdown voltage.
* Compliant with IEC 61000-4-2 level 4:
-- 15kV air discharge;
-- 8 kV contact discharge.
The ESDA6V1-5T6 and ESDALC6V1-5T6 are in full production, priced at $0.24 and $0.30, respectively, in quantities of 3000. Alternative pricing options are available for larger quantities.
Tuesday, June 15, 2010
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