Samsung intensifies advanced foundry logic process development with new semiconductor R&D center

SEOUL, SOUTH KOREA: Samsung Electronics announced that its new Semiconductor R&D Center has started advanced logic process development, an important part of Samsung’s drive in the foundry business.

The Semiconductor R&D center brings together Samsung’s advanced logic and memory process research teams into one organization to realize synergies in various areas including new materials, transistor structures, and early access to leading edge process equipment. This will enable Samsung’s foundry customers to deliver industry leading silicon solutions that are optimized for performance, power consumption and area.

Samsung Foundry, one of the key growth engines of Samsung Electronics, offers advanced logic process manufacturing to leading fabless and IDM companies. Currently in mass production at 45 nanometer (nm), Samsung is also preparing next generation 32-/28-nm and beyond process technologies through its continued participation in the IBM Technology Alliance.

“Samsung has made significant progress in the foundry business this year, with new customer signings and good technical results on our most advanced nodes,” said Dr. Stephen Woo, executive vice president and general manager of Samsung Electronics’ System LSI Division.

“The Semiconductor R&D Center will significantly increase the resources focused on foundry logic process technology and will work with our current logic process development team to develop the most advanced process nodes. This way we maintain focus on meeting the needs of our foundry customers whilst also leveraging the world’s leading expertise in memory.”

The Semiconductor R&D center is focused on next generation semiconductor process development for both memory and logic applications, including sub-28nm process technology. At these advanced nodes, Samsung will leverage memory process development advancements to foundry logic process development and vice versa.

Expected synergies include a broad spectrum of technologies including High-K, 3D transistors, and advanced lithography such as extreme ultra violet (EUV), which Samsung is a leader in.

Additionally, Samsung’s Semiconductor R&D center is developing innovative interconnect and packaging solutions for these deep sub-micron technology nodes including through silicon via (TSV), where vertically stacked chips are connected with through silicon vias to enhance speed and performance.

“High-performance and low power are no longer mutually exclusive,” said Dr. Kinam Kim, executive vice president and general manager of Samsung Electronics’ Semiconductor R&D Center.

“There is critical R&D work to be done at the most advanced process nodes with regards to minimizing power consumption while incorporating a feature rich menu of devices for designers to create innovative next-generation mobile and high performance SoC devices. Samsung is addressing this and other design needs head-on by increasing our focus on logic process advancements while taking advantage of know-how gained in memory.”

The research efforts at this R&D center will complement other consortiums and joint development activities, including not only the IBM Technology Alliance, but also Samsung’s participation in IMEC and Sematech.