EL SEGUNDO, USA & TAO YUAN SHIEN, TAIWAN: AWR and WIN Semiconductors Corp. (WIN) have released of the WIN/AWR H2W PH50-00 process design kit (PDK). The PDK for the WIN PH50-00 GaAs enhancement/depletion-mode pseudomorphic high electron mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT) foundry process is the latest in AWRs series of PDKs available to monolithic microwave integrated circuit (MMIC) designers.
WIN PH50-00 is a high-frequency, high-power MMIC process that has been in production since 2007. Until now, PDKs and design tools have lacked the technology needed to take full advantage of the advanced features in the process. However, the new WIN/AWR PDK announced today fully exploits the process along with the unique, innovative technologies in the latest version of Microwave Office software (v2009), as well as AWRs ACETM automatic circuit extraction technology, AXIEMTM 3D planar electromagnetic simulator, and APLAC multi-rate harmonic balance (MRHB) simulator. The WIN/AWR PP50-00 PDK can be resident in Microwave Office software simultaneously with packaging and other foundry PDKs to provide a complete module co-design environment.
“The latest WIN/AWR PDK provides customers with the most accurate models available for pHEMT and HBT process technologies,” said Gary St. Onge, senior vice president of international sales at WIN Semiconductors. "By facilitating our customers design flow with advanced compound semiconductor processes as well as advanced EDA tools and flows, we bridge the gap from design concept to working product.”
“The PH50-00 process from WIN Semiconductors continues to win high praise from MMIC designers around the world,” said Sherry Hess, vice president of marketing at AWR. “Its versatility is unmatched in enabling high levels of integration and performance. These achievements make the process exceptionally well suited for the most complex, functionally-dense MMICs. The AWR/WIN PH50-00 PDK allows designers to embrace the full potential of the PH50-00 process.”
Thursday, October 1, 2009
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