Friday, June 19, 2009

Microsemi silicon carbide diodes standard on designated power modules

IRVINE, USA: Microsemi Corp., a leading manufacturer of high performance analog mixed signal ICs and high reliability semiconductors, has made silicon carbide diode upgrades standard on a large selection of its current portfolio of power modules for industrial, UPS, SMPS and motor drive applications.

While the substitution of silicon carbide Schottky diodes for conventional fast recovery diodes (FREDs) is an option on all Microsemi power modules, the company has selected the most frequently used offerings for standardization where high temperature operation and temperature independent switching behaviour are essential at elevated operating frequencies.

"By expanding our portfolio with these silicon carbide-enhanced modules, Microsemi provides our customers with a unique variety of standard modules to best suit their design needs," said Philippe Dupin, Director of Power Module Products, located in Bordeaux, France.

"The superior electrical characteristics of silicon carbide devices, in combination with Microsemi's innovative packaging, add to our ability to satisfy the needs of power system designers seeking to increase their power density, efficiency and system reliability with standard module solutions."

The modules now with standard SiC upgrades range from 500V to 1200V, mainly utilizing MOSFET technology. A smaller number of IGBT modules are also included. To optimize electrical performance the SiC diodes have been implemented in packages with the lowest parasitics, low profile and very compact SOT227, SP1, SP3, SP4 and SP6 packages.

Electrical configurations that benefit from SiC diode technology vary from single switch to phase leg, full bridge, boost, dual boost, Buck and dual Buck choppers.

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