2011 INTERNATIONAL MICROWAVE SYMPOSIUM, BALTIMORE, USA: Toshiba America Electronic Components Inc. (TAEC) and its parent company, Toshiba Corp., announced the TGI1314-25L, a gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT), the latest addition to its power amplifier product family.
The TGI1314-25L, Toshiba's new GaN HEMT for Ku-band satellite communication application, operates in the 13.75GHz to 14.5GHz range with output power of 25W. The device features output power of 44.0dBm (typ.) with 39dBm input power, linear gain of 8.0dB (typ.) and drain current of 2.5 Amps (typ.). The new product is targeted to Satcom applications including very small aperture terminals (VSAT).
"The expansion of Toshiba's GaN power amplifier family brings higher gain and very efficient features to microwave designers, which reduce heat sink requirements and enable smaller terminals and converters with a full GaN HEMT line-up that includes drivers," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, TAEC Discrete Business Unit.
"Since Toshiba released its 50W Ku-band product a few years ago, many customers have requested a full line-up of GaN HEMTs, which will simplify the power supply design of Solid-State Power Amplifiers (SSPA) and block up converters (BUC). In addition, small output power applications, such as VSAT, can benefit from GaN HEMTs, making fan-less or very small equipment possible."
In 2009, Toshiba announced the addition of the Extended Ku-band TGI1314-50L to its GaN power amplifier family, which operates in the 13.75GHz to 14.5GHz range for Satcom to support SSPA applications. The TGI1314-50L is now in mass production.
Wednesday, June 8, 2011
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