GENEVA, SWITZERLAND: STMicroelectronics has extended its family of high-efficiency power transistors featuring sixth-generation STripFET technology, adding more choices for designers to deliver energy-saving advantages for a wider variety of applications.
The latest STripFET VI DeepGATE power MOSFETs can withstand maximum voltages up to 80V, allowing the new technology to be used in solar applications (micro-inverters), telecommunications, networking and power supplies for servers. The high voltage ratings permit reliable operation in 48V telecom applications, delivering efficiency gains that help operators reduce network running costs. In addition, consumer power supplies will draw less energy and will operate at lower temperatures for improved user comfort and longer life.
The first five parts introduced are the 60V STP260N6F6 and STH260N6F6-2, the 75V STP210N75F6 and STH210N75F6-2, and the 80 V STL75N8LF6. Using ST's latest-generation DeepGATE trench MOSFET structure, they achieve amongst the industry's lowest on-state resistance per die area for this type of device. This allows ST to house the low-loss devices in a choice of miniature and industry-standard package styles, enabling customers to boost system efficiency while also minimizing PCB (printed-circuit-board) dimensions and lowering overall component costs.
* 60V and 80V breakdown voltage.
* 0.0016 Ohm on-state resistance (STH260N6F6-2).
* 180A current rating (STx260F6N6).
* 100 percent avalanche rated.
The STP260N6F6 and STP210N75F6 in the through-hole TO-220 package are available immediately, priced from $3.20 in quantities of 1000; as well as the STH210N75F6-2 and STH260N6F6-2 in the surface-mount H2PAK-2 package, priced from $3.50 in quantities of 1000.
Samples of the STL75N8LF6 in the PowerFLAT 5x6 package, which reduces footprint while optimizing power-handling capabilities, will be available in Q3 2011 from $1.50 in quantities of 1000. Alternative pricing options are available for larger quantities.