GaN technologies for power electronic apps

LYON, FRANCE: According to Yole Développement, By reaching 600V+ voltage breakdown, GaN device could expect exceeding a $350 million market size by 2015

GaN is an already well implanted semiconductor technology, widely diffused in the LED optoelectronics industry. For about 10 years, GaN devices have also been developed for RF wireless applications where they can replace Silicon transistors in some selected systems.

That incursion in the RF field has open the door to the power switching capability in the lower frequency range and thus to the power electronic applications. Thus Yole Developpement decided to release a new market analysis.

Yole's “Power GaN 2010” report provides a complete analysis of the GaN device and substrate industry in the power electronic fields along with key market metrics. It provides company involvement as well as technology state-of-the art.Source: Yole Développement