SUNNYVALE, USA: Fujitsu Semiconductor America Inc. (FSA) has introduced a new series of advanced Ferroelectric Random Access Memory (FRAM) products designed and manufactured by Fujitsu to meet the rapidly increasing demand for FRAM in industrial systems, factory automation, metering, and many other low-power applications that require high-performance, non-volatile memory.
The new MB85RSxxx SPI FRAM family includes three different devices: the 256-Kbit MB85RS256A, the 128-Kbit MB85RS128A and the 64-Kbit MB85RS64A. All three operate at voltage ranges between 3.0V and 3.6V and provide an industry-leading 10 billion write/read cycles, as well as data retention of 10 years at 55 degrees C.
The new series is based on Fujitsu's latest 0.18um (micron) FRAM technology and features a maximum operating frequency of 25MHz, a significant improvement over the company's previous FRAM devices. Since voltage boosters are unnecessary for the writing process, the new FRAMs are well-suited for low-power applications. All the MB85RSxxx series devices are offered in 8-pin, plastic SOP packages with standard memory pin assignment, which are fully compatible with E2PROM devices.
In addition to the SPI FRAM family, Fujitsu also has developed standalone FRAM devices featuring the I2C (MB85RCxxx series) and parallel interfaces (MB85Rxxx series). These standalone devices are available in density levels ranging from 16Kbit to 1Mbit and with a product roadmap that includes higher densities to meet future market demands.
Wednesday, July 13, 2011
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